IRF630N is a popular N-Channel Power MOSFET designed for high-speed switching and power amplification applications, typically housed in a TO-220 package. It is known for its ability to handle moderate-to-high voltage and current loads efficiently, making it suitable for applications such as switching power supplies (SMPS), motor drivers, and UPS systems.
Specifications
Transistor Type: N-Channel Enhancement Mode MOSFET
Package Type: TO-220 (Through-hole, suitable for heat sinking)
Drain-Source Voltage (VDSS): 200 Volts
Continuous Drain Current (ID): 9A to 9.3A (varies slightly by manufacturer)
On-Resistance (RDS): ~0.35Ohm to 0.4 Ohm (low conduction losses)
Maximum Power Dissipation (PD): 75W - 100W
Gate-Source Voltage (VGS): pm20V
Operating Temperature: -65°C to 150°C
Applications
Switching Regulators and Converters: DC-DC Converters
Motor Drivers: Controlling DC motors
Uninterruptible Power Supplies (UPS): High-speed switching
Audio Amplifiers: Power amplification circuits