1N5819 is a Schottky barrier rectifier diode widely used in power supplies, battery-powered devices, and electronic circuits. It is designed for fast switching and has a low forward voltage drop, making it more efficient than standard silicon rectifier diodes.
Diode type : Schottky Barrier Rectifier
Maximum repetitive reverse voltage (VRRM):40 V
Average forward rectified current (IF(AV)):1A
Peak surge forward current (IFSM):25A (8.3 ms half-sine)
Forward voltage (VF):0.2–0.6 V(typical), up to 0.49V at 1A depending on manufacturer
Reverse leakage current (IR) Up to 500 µA–1 mA at rated reverse voltage
Junction capacitance :Approximately 70–110 pF
Reverse recovery time :Extremely fast (Schottky diode, virtually no reverse recovery charge)
Operating junction temperature:−65°C to +125°C(some manufacturers specify up to +150°C)